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Product group : Microprocessors & Memory Circuits
Product Sub-group : SRAM

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	144Mbit SRAMs enhance military signal processing system performance (23/11/2009) Cypress Semiconductor has introduced monolithic SRAMs, the new members of its 65nm SRAM family. The new 144Mbit CY7C16xxKV18 QDRII, QDRII+, DDRII and DDRII+ memories leverage 65nm process technology developed with foundry partner ... More
	Non-Volatile SRAM Family (16/10/2009) Leveraging 0.13µm SONOS (silicon oxide nitride oxide silicon) embedded, non-volatile memory technology, serial non-volatile SRAMs have been introduced by Cypress Semiconductor. The company has launched a 1Mbit serial nvSRAM (non-v... More
Copper-Leadframe Memories (26/11/2008) Integrated Silicon Solution has introduced a complete line of copper-leadframe memories, including SRAM, DRAM and EEPROM devices. The use of copper leadframes can enhance the long-term reliability of these devices in harsh environ... More
ISSI introduces 256Kx32, 8Mb asynchronous SRAM (13/10/2008) Integrated Silicon Solution (ISSI) has introduced a high speed/low power 256Kx32, 8Mb asynchronous SRAM, the IS61WV25632, with access times of 8nS. This new device can give the designer a high speed device that utilises low power ... More
	PSoC nvSRAM Devices (29/09/2008) Cypress Semiconductor has introduced PSoC NV devices, which integrate a non-volatile static random access memory (nvSRAM) and a programmable system on chip. The PSoC NV devices integrate configurable analogue and digital circuits,... More
	IDT introduces dual port devices (24/07/2008) IDT (Integrated Device Technology) has announced the availability of two new dual port devices to its family of multi-port devices. For applications ranging from industrial control to medical imaging and communications, the new 9M... More
	Cypress unveils 2-Mbit and 8-Mbit nvSRAMs (21/07/2008) Cypress Semiconductor has introduced 2-Mbit and 8-Mbit non-volatile static random access memories (nvSRAMs), extending Cypress's nvSRAM portfolio from 16-Kbit to 8-Mbit. The new devices feature access times of 20ns, infinite read,... More
	Renesas Technology unveils low-power SRAM products (31/03/2008) Renesas Technology has announced the development of the R1WV6416R Series of 64 Mbit Advanced Low-Power SRAM (Advanced LPSRAM) products with high LPSRAM capacity, and the R1LV3216R Series of 32 Mbit Advanced LPSRAM products with co... More
	16Mbit Rad-tolerant 5V SRAM (26/01/2008) The UT9Q512E 4Mbit and the UT9Q513K32 16Mbit 5V radiation-tolerant SRAMs are available as a QML Q SRAM solution. The QCOTS (Quantified Commercial Off-the-Shelf) family assures the industry of continued 50 krads(Si) products for sa... More
	4Mbit Non-volatile SRAM (25/01/2008) Simtek's first two 4Mbit products in the company's 130nm CMOS SONOS family of nvSRAM ICs, the STK14EC8 (512kbit x 8) and STK14EC16 (256kbit x 16) devices, deliver fast access SRAM performance at speed grades of 15, 25, and 45ns wh... More
Nu Horizons adds ISSI franchise for high speed, low power SRAM (31/10/2007) Nu Horizons Electronics has won a European franchise for ISSI, a manufacturer of high speed, low power SRAM, medium density DRAM memory and low density E2PROMs. The deal is an extension of an existing franchise held by Nu Horizons... More
	Cypress unveils new 4-Mbit nvSRAM (19/10/2007) Cypress Semiconductor has introduced a 4-Mbit non-volatile static random access memory (nvSRAM). The new device features access times as low as 15 ns, infinite read, write and recall cycles, and 20-year data retention, making it s... More
ISSI expands synchronous SRAM product line (14/10/2007) Integrated Silicon Solution has broadened its synchronous SRAM product line with the addition of a family of 36Mb high speed synchronous SRAMs. These new, 36-Mb devices are available in 2Mx18 and 1Mx36 configurations and are offer... More
New 5V, 4Mbit asynchronous SRAMs from ISSI (17/08/2007) Integrated Silicon Solution has introduced a line of 5V, 4Mbit asynchronous SRAMs. This new offering includes devices organised as 512Kx8 and 256Kx16 with access times as fast as 10nS and standby current as low as 200nA. Fabricate... More
	16-Mbit Rad-Hard SRAM (01/05/2007) The AT68166 is a 16-Mbit SRAM packaged in a hermetic Multi-Chip Module (MCM) for space applications. MCM packaging technology offers the advantages of reducing PCB real estate, the number of individual components and improves over... More
16Mbit High-Speed SRAM (01/04/2007) The IS61WV102416ALL/BLL is the industry's first 16Mbit, 1Mx16, high-speed and low-power asynchronous SRAM with access times as fast as 8ns, claims manufacturer ISSI. When operating at 10ns, the chip draws a maximum power consumpti... More
	Quad Data Rate SRAMs (01/10/2006) Built on a 90nm process, the quad data rate II+ (QDR II+) and double data rate II+ (DDRII+) SRAM devices enable up to 50% more system-level bandwidth than their predecessor QDRII and DDRII. The devices accelerate read/write capabi... More
	8-Bit Mixed Memory (01/12/2005) Designed as commercial-off-the-shelf mixed memory, the 1230-0022-1-IB and 1230-0023-1-IB modules embed 4Mbit SRAM and 1Mbit E2PROM and 12Mbit SRAM and 6Mbit E2PROM memories respectively, in an industrial-grade QFP72 package. The l... More
	Dual-Port RAMs (01/09/2005) Cypress Semiconductor launched dual-port RAMs targeted at mobile-phone and PDA applications, such as the More Battery Life (MoBL) name tag. The devices are aimed at enabling high-speed interprocessor communication in next-generati... More
	SMT SRAM Module for Mission-Critical Data (01/09/2005) The DS3030, DS3045, DS3050 and DS3065 are what Dallas Semiconductor introduced as the world's first and only single-piece, surface-mountable nonvolatile SRAM modules with an integrated real-time clock (RTC). The modules provide a ... More
	Rad Hard Memory (01/09/2005) The MMSR32510804STC is a 16Mbit commercial-off-the-shelf integrated Static RAM organised as 512k x32. The module is made of four memories (512k x 8 each) accessed with independent write enable. The units are well-suited for high-r... More
	4-Mbit SRAMs (01/06/2005) Designed as sub-20ns access time, radiation hardened 4-Mbit SRAMs, the AT60142F and AT60142FT CMOS asynchronous devices are organised as 512K x 8-bits. Both devices combine rad-hard capabilities, a latch-up threshold and a total d... More
	128Mb Synchronous DRAMs (01/11/2003) With access times of 7ns, and featuring low standby and low operating currents, ISSI have introduced a new family of 128Mb synchronous DRAMs. Available in 16Mx8 (IS42S81600A), 8Mx16 (IS42S16800A) and 4Mx32 (IS42S32400A) configurat... More
	16Mbit & 32Mbit Pseudo SRAMs (01/08/2003) The IS32WV16100 and IS32WV16200 ultra-low power Pseudo SRAM products have a wide voltage range from 2.3V to 3.6V. The 1Mx16 and 2Mx16 configurations are suitable for next generation cellular phones, as well as wireless, handheld e... More
	18 Mbit Network SRAM (01/04/2003) The 18 Mbit SigmaRAM Network SRAM achieves a 350 MHz clock speed and offers up to 72 bit bus width. The new double-late-write device offers 100 percent data-bus efficiency and an exceptionally fast data throughput of 25 gigabits p... More